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| Datasheet File OCR Text: |
| BB 512 Silicon Variable Capacitance Diode q q BB 512 For AM tuning applications Specified tuning range 1 ... 8 V Type BB 512 Ordering Code (tape and reel) Q62702-B479 Pin Configuration 1 2 C A Marking white M Package SOD-123 Maximum Ratings Parameter Reverse voltage Reverse voltage (R 10 k) Forward current, TA 60 C Operating temperature range Storage temperature range Thermal Resistance Junction - ambient Rth JA Symbol VR VRM IF Top Tstg Values 12 15 50 - 55 ... + 150 Unit V mA - 55 ... + 150 C 600 K/W Semiconductor Group 1 10.94 BB 512 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Reverse current VR = 10 V VR = 10 V, TA = 60 C Diode capacitance, f = 1 MHz VR = 1 V VR = 8 V Capacitance ratio VR = 1 V, 8 V Series resistance f= 0.5 MHz, VR = 1 V Figure of merit f= 0.5 MHz, VR = 1 V Temperature coefficient of diode capacitance f= 1 MHz, VR = 1 V Capacitance matching VR = 1 ... 8 V Symbol min. IR - - CT 440 17.5 CT1 CT8 rs Q TCC CT Values typ. - - 470 - - 1.4 480 500 - max. Unit nA 20 200 pF 520 34 - - - - 3 - - ppm/K % 15 - - - - CT Semiconductor Group 2 BB 512 Diode capacitance CT = f (VR) Capacitance ratio CT/CTref = f (VR) Capacitance ratio CT/CT1V = f (VR) Temperature coefficient of junction capacitance TCC = f (VR) Semiconductor Group 3 |
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